发明名称 |
Source side injection storage device with control gates adjacent to shared source/drain and method therefor |
摘要 |
A storage device has a two bit cell in which the select electrode is nearest the channel between two storage layers. Individual control electrodes are over individual storage layers. Adjacent cells are separated by a doped region that is shared between the adjacent cells. The doped region is formed by an implant in which the select gates of adjacent cells are used as a mask. This structure provides for reduced area while retaining the ability to perform programming by source side injection.
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申请公布号 |
US7378314(B2) |
申请公布日期 |
2008.05.27 |
申请号 |
US20050170446 |
申请日期 |
2005.06.29 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HONG CHEONG M.;CHINDALORE GOWRISHANKAR L. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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