| 摘要 |
A memory device is provided to form a large quantity of memory cells by stacking memory cells sequentially on a substrate, so that many memory cells can be formed on the same area. A first memory cell(40) is formed on a substrate. A second memory cell(60) is formed on the upper side of the first memory cell. The first and the second memory cells comprise the lower electrodes(41,61) which are made of a conductive substance, a ferroelectric layer which is formed on the lower electrode, and the upper electrodes(43,63) which are made of the conductive substances and installed on the ferroelectric layer. The lower and the upper electrodes are made up of organic materials.
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