| 摘要 |
After low dielectric constant films are formed on a wiring, hardmasks are formed on the low dielectric constant films. A resistmask is formed on the hardmasks. Via holes are formed in the low dielectric constant films using the resistmask. Ashing the resistmask is performed. During this process, a protection film is formed by sticking a sputtered material generated from the resistmask at least onto side surfaces of the via holes. Thereafter, the via holes are extended to the wiring, and a conductive material is buried into the via holes.
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