SPIN TRANSISTOR USING STRAY FIELD

摘要

A spin transistor using a leakage magnetic field is provided to solve a low injection problem caused by junction part transmission of spin by generating electrons which are sufficiently spin-polarized by the leakage magnetic field and obtaining a resistance difference by selectively accepting the electrons using the filtering effect. A semiconductor substrate(11) comprises a channel layer(12). A first and second electrodes(18,19) are located at the substrate along the longitudinal direction of the channel layer, and separated as a predetermined gap. A source and a drain formed with a magnetized ferroelectric material are located between the first and second electrodes, and separated as the predetermined gap. A gate(15) is formed on the substrate between the source and drain, and controls the spin direction of the electron passing through the channel. The spin of the electron is arranged by the leakage magnetic field of the source at the lower part of the source, and is filtered by the leakage magnetic field of the drain at the lower part of the drain.