| 摘要 |
A method of improving an initiation layer for a low-k dielectric film by a digital liquid flow meter is provided to deposit a low-k layer by supplying an oxidation gas into a process chamber. A substrate within a process chamber having a powered electrode is ocated(201). One or more oxidizing gases are flowed into the process chamber(202). An organosilicon compound is flowed from a first bulk storage container through a first digital liquid flow meter at a first organosilicon flow rate to a first vaporization injection valve(205). The organosilicon compound is vaporized, and the organosilicon compound and a first carrier gas are flowed into the process chamber(207). The first organosilicon flow rate is maintained to deposit an initiation layer in the presence of an RF power(209). A porogen compound is flowed from a second bulk storage container through a second digital liquid flow meter at a first porogen flow rate to a second vaporization injection valve(211). The porogen compound is vaporized, and the porogen compound and a second carrier gas are flowed into the process chamber(213). The first organosilicon flow rate and the first porogen flow rate is increased while depositing a transition layer in the presence of the RF power(217). A second organosilicon flow rate and a second porogen flow rate are maintained to deposit a porogen containing organosilicate dielectric layer in the presence of the RF power(219).
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