| 摘要 |
An apparatus for physical vapor deposition is provided to deposit a wafer easily by shielding a metal target and wafer peripherals as Ar, and to improve uniformity by preventing residues from being deposited on the wafer. A magnet(120) is rotated to form a magnetic field inside a chamber(100). A process gas flowed into the chamber collides with the surface of a metal target(110) by the magnetic field, and metal atoms of the surface is deposited on the wafer. A shield gas supply unit(153) supplies a shield gas for shielding the wafer peripherals and the metal target so as to prevent byproducts from being deposited to the wafer during deposition. A shield gas exhaust unit(154) exhausts the shield gas. A process gas supply unit(143) is installed to supply the process gas into the shield gas supply unit.
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