发明名称 SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE
摘要 <p>A sputtering target that even when the content of indium is reduced, excels in electrical conductivity, etchability, heat resistance, etc., being available for forming, according to sputtering technique, of a transparent conductive film suitable for use in various applications, such as displays represented by a liquid crystal display, touch panels and solar cells. There is provided a sputtering target containing indium, tin, zinc and oxygen, characterized by further containing a hexagonal layered compound, a spinel-structure compound and a bixbyite-structure compound. In particular, the sputtering target is characterized in that the atomic ratio of the formula In/(In+Sn+Zn) is in the range of 0.33 to 0.6 and the atomic ratio of the formula Sn/(In+Sn+Zn) in the range of 0.05 to 0.15.</p>
申请公布号 KR20080046197(A) 申请公布日期 2008.05.26
申请号 KR20087006639 申请日期 2006.09.14
申请人 IDEMITSU KOSAN CO., LTD. 发明人 YANO KOKI;INOUE KAZUYOSHI;TANAKA NOBUO
分类号 C23C14/34;B22F3/00 主分类号 C23C14/34
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