发明名称 FORMULATION FOR REMOVAL OF PHOTORESIST, ETCH RESIDUE AND BARC
摘要 A formulation for removing a material selected from photoresist, ion injection photoresist, etching residue, BARC(bottom antireflective coating) and their combination from a substrate, and a removing method using the formulation are provided to improve the removing efficiency without damage. A formulation for removing a material selected from photoresist, ion injection photoresist, etching residue, BARC and their combination from a substrate comprises ammonium hydroxide; 2-aminobenzothiazole; and the balance of water, wherein the content of the metal contaminant in the hydroxide is 100 ppm or less. Preferably the formulation comprises further an oxidant and an abrasive. Preferably the ammonium hydroxide is selected from tetramethylammonium hydroxide, tetramethylammonium fluoride and their mixture.
申请公布号 KR20080046073(A) 申请公布日期 2008.05.26
申请号 KR20070020936 申请日期 2007.03.02
申请人 AIR PRODUCTS AND CHEMICALS, INC. 发明人 EGBE MATTHEW I.;LEGENZA MICHAEL WALTER
分类号 C11D3/16;C11D7/06 主分类号 C11D3/16
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