NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A nonvolatile memory device and a method of fabricating the same are provided to make dense the texture between an insulating layer and a metal layer by forming double insulating layers out of the lower part metal layer and the intermediate metal layer. A nonvolatile memory device comprises a switching element and a storage node(100) which is connected with the switching element. The storage node comprises a lower metal layer(60). And a first insulating layer(62), an intermediate metal layer(64), a second insulating layer(66), an upper metal layer(68), a carbon nano layer and a passivation layer(80) are formed sequentially on the lower metal layer. The lower metal layer and the intermediate metal layer are made of aluminum.