ELECTRODE FOR PLACING WAFER

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable electrode for placing a wafer capable of preventing the dielectric breakdown of a heat transfer gas.

SOLUTION: The electrode for placing a wafer is provided with an electrode body 1 having a flow passage for circulating a temperature-adjusting medium therein, a dielectric film 2 formed on the wafer mounting surface of the electrode body; and an insulative gas introducing passage 10 for supplying a heat transfer gas into a gap formed by the dielectric film and a specimen placed on the dielectric film through the inside of the electrode body. The electrode is used for placing the wafer 3 placed on the dielectric film in a vacuum chamber to apply plasma treatment to the wafer using plasma generated in the vacuum chamber. Ridges each having a concave portion substantially perpendicular to the axis of the introducing passage are formed in the a portion of the gas introducing passage which faces the wafer placing surface.

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