SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing method capable of preventing the deterioration of productivity of a semiconductor device from a substrate. SOLUTION: HF (hydrogen fluoride) gas is supplied to a wafer W having a thermal oxidation film 72, a BPSG (boron phosphorous silicate glass) film 75 and a deposit film 76 to etch the BPSG film 75 and the deposit film 76 selectively by hydrofluoric acid while residue 41 consisting of H2SiF6generated upon the etching is decomposed into HF and SiF4through heating. COPYRIGHT: (C)2008,JPO&INPIT