| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem wherein a high purity hafnium material suitable for electronic materials has not been prepared so far since the separation of zirconium resembling to hafnium in chemical properties is difficult, although hafnium-based materials are expected to be used as frontier electronic materials such as insulated gate materials. <P>SOLUTION: The present invention can provide the high purity hafnium material containing 1 wt. ppm or lower of zirconium and other impurity elements by a method based on the solvent extraction method using a TBP (tributyl phosphate) solvent, and its manufacturing method. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
