| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve high throughput of electron-beam drawing in a multistage deflection to a high degree with a high accuracy. <P>SOLUTION: In an electron-beam drawing device, patterns are drawn on a sample surface by deflecting electron beams by a plurality of stages of deflecting systems, the regions of the drawn patterns are positioned at deflectable sub-fields by a main deflection and the patterns are drawn by a sub-deflection in sub-field units. In the electron-beam drawing device, a drawing is conducted at every stripe consisting of first frame-drawing regions and second frame-drawing regions moved by a width C, and first sub-field drawing regions and second sub-field drawing regions are drawn alternately. In the electron-beam drawing device, 0<C<H holds when the widths of one sides of the sub-fields are H. Such an electron beam drawing device is provided. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
