| 摘要 |
PROBLEM TO BE SOLVED: To provide a heating body having a high temperature rising rate and capable of not only improving throughput but also achieving excellent thermal uniformity also in a transition state of wafer treatment and in a constant state that the wafer is subjected to heat treatment. SOLUTION: A heating body that heats a wafer comprising a heater 1 comprising a heater substrate 2 and a heating body 3 and a thermal uniformity plate 5 with higher thermal heat conductivity than that of the heater substrate 2, wherein the thermal uniformity plate 5 is fixed at the opposite side of the wafer mounting surface 1a of the heater 1 with a heat insulating layer 4 between. Preferably, a material of the heater substrate 1 is ceramic, or most preferably, an aluminum nitride in particular. In addition, the heat capacity of the heat uniform plate 5 is preferably larger than that of the heater substrate 2 and it is particularly preferable for the material thereof to be copper or an alloy of copper. COPYRIGHT: (C)2008,JPO&INPIT
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