| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensing device of backside irradiation type only with a sheet of substrate while substrate strength is maintained. SOLUTION: The solid-state image sensing device includes: a photoelectric converter 22 for converting an incident quantity of light into an electrical signal; and a plurality of pixels 21 formed on a semiconductor substrate 11. The semiconductor substrate 11 of the region (first region 12) where the plurality of pixels 21 are formed is characterized in that it is formed thinner than the semiconductor substrate 11 in the region (second region 13) other than that where at least the pixels 21 are formed. COPYRIGHT: (C)2008,JPO&INPIT
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