| 摘要 |
A method of fabricating a semiconductor device is provided to prevent formation of voids by removing particles of polymer component remaining in a via hole or trench using a cleaning process. A nitride layer and an insulating layer are formed on a semiconductor substrate(200), and a via hole and a trench are formed on the insulating layer. An insulating layer pattern(204a) of the substrate is placed to come in contact with a surface of an HCl cleaning solution of a reservoir, and then a first cleaning process is performed on the substrate using megasonic. The insulating layer pattern of the substrate is placed to come in contact with a surface of a dilute hydrofluoride solution of the reservoir, and then a second cleaning process is performed on the substrate using megasonic. The insulating layer pattern of the substrate is placed to come in contact with a surface of a tetra methlammonium hydroxide solution of the reservoir, and then a third cleaning process is performed on the substrate using megasonic. A barrier layer(226) is formed in the via hole and the trench, and then is planarized to form an upper interconnection(224).
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