| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device which can prevent the degradation of operating characteristics. SOLUTION: The nonvolatile memory device includes a semiconductor substrate 100 including a cell region and a peripheral circuit region, a cell gate 130 on the cell region, and peripheral circuit gates 120L, 120H on the peripheral circuit region. The cell gate 130 includes a charge storage insulating layer 132 on the semiconductor substrate 100, a gate electrode 134 on the charge storage insulating layer 132, and a conductive layer 136 on the gate electrode 134. The peripheral circuit gates 120L, 120H include gate insulating layers 122L, 122H on the semiconductor substrate 100, semiconductor insulating layers 124L, 124H on the gate insulating layers 122L, 122H, ohmic layers 126L, 126H on the semiconductor insulating layers 124L, 124H and the conductive layers 128L, 128H on the ohmic layers 126L, 126H. COPYRIGHT: (C)2008,JPO&INPIT
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