发明名称 |
Method of Manufacturing Thin Film, Method of Manufacturing P-Type Zinc Oxide Thin Film and Semiconductor Device |
摘要 |
There is provided a method of manufacturing a thin film, in which not only high crystallinity and surface flatness can be realized but also dopant doping can be performed at high concentration. The method includes a low temperature highly doped layer growing step of performing dopant doping while growing the thin film at a given first temperature; an annealing step of interrupting the growth of the thin film and annealing the thin film at a given second temperature higher than the first temperature; and a high temperature lowly doped layer growing step of growing the thin film at the second temperature.
|
申请公布号 |
US2008118769(A1) |
申请公布日期 |
2008.05.22 |
申请号 |
US20040588283 |
申请日期 |
2004.09.10 |
申请人 |
TOHOKU UNIVERSITY |
发明人 |
KAWASAKI MASASHI;OHTOMO AKIRA;FUKUMURA TOMOAKI;TSUKAZAKI ATSUSHI;OHTANI MAKOTO |
分类号 |
H01L29/12;B29C71/00;C30B29/16;H01L21/205;H01L21/363;H01L33/28;H05B6/00 |
主分类号 |
H01L29/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|