METHOD FOR FORMING GATE SPACER OF SEMICONDUCTOR DEVICE

摘要

A method of forming a gate spacer in a semiconductor device is provided to form the gate space having a uniform thickness every wafer or every region, irrespective of density of a gate. A gate(110) is formed on a semiconductor substrate(100), and then an undoped polysilicon layer is formed on the substrate with the gate. A plasma oxidization process is performed on the undoped polysilicon layer and a plasma nitrification process to form a spacer formation layer. The spacer formation layer is etched to form a gate spacer(130) at both sidewalls of the gate. The plasma oxidization process and the plasma nitrification process are performed under pressure of 300 to 600 mTorr at temperature of 400 to 800 °C.