| 摘要 |
<p>Under one aspect, a method for processing a thin film includes generating a first set of shaped beamlets from a first laser beam pulse, each of the beamlets of the first set of beamlets having a length defining the y-direction, a width defining the x-direction, and a fluence that is sufficient to substantially melt a film throughout its thickness in an irradiated film region and further being spaced in the x-direction from adjacent beamlets of the first set of beamlets by gaps; irradiating a first region of the film with the first set of shaped beamlets to form a first set of molten zones which laterally crystallize upon cooling to form a first set of crystallized regions including crystal grains that are substantially parallel to the x-direction and having a length and width substantially the same as the length.and width of each of the shaped beamlets and being separated from adjacent crystallized regions by gaps substantially the same as the gaps separating the shaped beamlets; generating a second set of shaped beamlets from a second laser beam pulse, each beamlet of the second set of beamlets having a length, width, fluence, and spacing that is substantially the same as the length, width, fluence, and spacing of each beamlet of the first set of beamlets; and continuously scanning the film so as to irradiate a second region of the film with the second set of shaped beamlets to form a second set of molten zones that are displaced in the x-direction from the first set of crystallized regions, wherein at least one molten zone of the second set of molten zones partially overlaps at least one crystallized region of the first set of crystallized regions and crystallizes upon cooling to form elongations of crystals in said at least one crystallized region.</p> |
