| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for efficiently carrying out both processes, i.e., the repairing of the adsorption site of a porous insulating film and the filling of holes exposed in the surface. SOLUTION: One embodiment of the manufacturing method of the semiconductor device according to this invention is characterized by comprising the steps of forming a low-k film (S104) for forming the porous insulating film on a substrate using a porous insulating material, forming a wiring groove (S116) for forming an opening in the low-k film, repairing the film quality (S122) for repairing the film quality of the low-k film on the surface of the opening by supplying a predetermined gas for substituting Si-OH group for the opening portion, and pore sealing (S124) for carrying out the pore sealing of the opening surface using the predetermined gas identical to that used in the film quality repairing after the repairing of the film quality has been carried out. COPYRIGHT: (C)2008,JPO&INPIT |
