| 摘要 |
PROBLEM TO BE SOLVED: To improve the prospect of a model equation, and to improve simulation efficiency by reducing a parameter handled simultaneously in simulation apparently, in a method of evaluating semiconductor device and a method of designing semiconductor device. SOLUTION: In a single-body MOSFET, when effective inverting layer mobility, effective channel width, effective channel length, gate insulating film capacity per unit area, an effective gate voltage, and effective inverting layer mobility in the case of V<SB>geff</SB>=0 are set toμ<SB>eff</SB>, W<SB>eff</SB>, L<SB>eff</SB>, C<SB>OX</SB>, V<SB>geff</SB>, andμ<SB>0</SB>, respectively, U<SB>0</SB>=μ<SB>0</SB>W<SB>eff</SB>C<SB>OX</SB>/L<SB>eff</SB>results. When an effective primary mobility attenuation coefficient, a secondary mobility attenuation coefficient, a threshold voltage, and complementary conductance are set toΘ<SB>1eff</SB>,Θ<SB>2</SB>, V<SB>th</SB>, g<SB>m</SB>, respectively, Y is set to Y≡I<SB>ds</SB>(g<SB>m</SB>)<SP>-1/2</SP>, the model equation including 1/Y<SP>2</SP>is used as one variable obtaining correlation, and not more than three apparent fitting parameters are set. COPYRIGHT: (C)2008,JPO&INPIT |
