发明名称 |
Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, a method of forming the capacitor |
摘要 |
A method of forming a dielectric structure, such as a layer, is disclosed. The method comprises forming a high-k structure from a plurality of portions of a high-k material. Each of the plurality of portions of the high-k material is formed by depositing a plurality of monolayers of the high-k material and annealing the high-k material. The high-k material may be a perovskite-type material including, but not limited to, strontium titanate. A dielectric structure, a capacitor incorporating a dielectric structure and a method of forming a capacitor are also disclosed.
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申请公布号 |
US2008118731(A1) |
申请公布日期 |
2008.05.22 |
申请号 |
US20060600695 |
申请日期 |
2006.11.16 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SRINIVASAN BHASKAR;SMYTHE JOHN A. |
分类号 |
B05D5/12;H01G4/005;H01G9/00 |
主分类号 |
B05D5/12 |
代理机构 |
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主权项 |
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地址 |
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