发明名称 Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, a method of forming the capacitor
摘要 A method of forming a dielectric structure, such as a layer, is disclosed. The method comprises forming a high-k structure from a plurality of portions of a high-k material. Each of the plurality of portions of the high-k material is formed by depositing a plurality of monolayers of the high-k material and annealing the high-k material. The high-k material may be a perovskite-type material including, but not limited to, strontium titanate. A dielectric structure, a capacitor incorporating a dielectric structure and a method of forming a capacitor are also disclosed.
申请公布号 US2008118731(A1) 申请公布日期 2008.05.22
申请号 US20060600695 申请日期 2006.11.16
申请人 MICRON TECHNOLOGY, INC. 发明人 SRINIVASAN BHASKAR;SMYTHE JOHN A.
分类号 B05D5/12;H01G4/005;H01G9/00 主分类号 B05D5/12
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