发明名称 ASSISTED SELECTIVE GROWTH OF HIGHLY DENSE AND VERTICALLY ALIGNED CARBON NANOTUBES
摘要 The selective growth of vertically aligned, highly dense carbon nanotube (CNT) arrays using a thermal catalytic chemical vapor deposition (CCVD) method via selection of the supporting layer where the thin catalyst layer is deposited on. A thin iron (Fe) catalyst deposited on a supporting layer of tantalum (Ta) yielded CCVD growth of the vertical dense CNT arrays. Cross-sectional transmission electron microscopy revealed a Vollmer-Weber mode of Fe island growth on Ta, with a small contact angle of the islands controlled by the relative surface energies of the supporting layer, the catalyst and their interface. The as-formed Fe island morphology promoted surface diffusion of carbon atoms seeding the growth of the CNTs from the catalyst surface.
申请公布号 WO2008060665(A2) 申请公布日期 2008.05.22
申请号 WO2007US66712 申请日期 2007.04.16
申请人 BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS;WANG, YUNYU;HO, PAUL, S.;SHI, LI;YAO, ZHEN 发明人 WANG, YUNYU;HO, PAUL, S.;SHI, LI;YAO, ZHEN
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