| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a light shielding film for preventing a defect, such as a step cut due to a level difference of the film deposited atop the same by improving the end surface shape of the light shielding film, and a method for manufacturing an electrooptical device using the same. <P>SOLUTION: A first light shielding layer 21 and a second light shielding layer 22 are deposited on an element substrate 10, and a resist mask is formed on the second light shielding layer 22. The second light shielding layer 22 is subjected to over-etching by isotropic etching using an etchant having an etching rate to the second light shielding layer 22 greater than the etching rate to the first light shielding layer 21 using the resist mask. In succession, the first light shielding layer 21 is subjected to anisotropic etching using the same mask. As a result thereof, the first light shielding layer 21 is removed leaving a range of the resist mask. By this method, the end surfaces of the first light shielding layer 21 and the second light shielding layer 22 are formed to a staircase shape of a small difference in level. The covering properties of the protective film 15 and semiconductor layer 16 which are the upper layers of the level difference portions are improved and the defect can be prevented. <P>COPYRIGHT: (C)2008,JPO&INPIT |
