| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma apparatus which can treat a large-area substrate with plasma at a high speed though being a small and simple structure, by using an ICP plasma system. SOLUTION: This plasma apparatus comprises: an electric-field-forming means for generating an induced electric field by using a coil; a window of a dielectric that makes the electric field formed by the electric-field-forming means transmitted therethrough; and a gas introduction means for supplying a gas, all of which are arranged so as to have a long shape in the same longitudinal direction. The substrate is subjected to plasma treatment such as film formation by CVD while being transported in the direction perpendicular to the longitudinal direction. COPYRIGHT: (C)2008,JPO&INPIT
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