| 摘要 |
A semiconductor device according to the present invention comprises a semiconductor substrate of a first conductive type, a first element region and a second element region provided on the semiconductor substrate, a retrograde well formed from a first impurity of a second conductive type and provided at a deep section, in a thickness direction, of the first element region, an enhanced dope layer formed from a second impurity of the second conductive type and provided at an intermediate section, in a thickness direction, of the first element region, a punch-through control layer formed from a third impurity of the second conductive type and provided at a surface section of the first element region, a second gate insulation film provided on the semiconductor substrate and making contact with the first element region, and a first gate insulation film provided on the semiconductor substrate, making contact with the second element region and having a thickness larger than that of the second gate insulation film, wherein the second impurity is distributed in a region where a profile of the first impurity and a profile of the third impurity intersect with each other.
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