| 摘要 |
A semiconductor device reduces a number of boost voltage pumps by controlling an operation of the boost voltage pumps in accordance with the number of activated memory banks, thereby reducing an area which the boost voltage pumps occupy in a memory. The semiconductor device includes memory banks, a boost voltage generating controller, and boost voltage pumps. The boost voltage generating controller outputs boost voltage enable signals corresponding to the number of activated memory banks of the memory banks, wherein the number of the boost voltage enable signals is smaller than that of the memory banks. The boost voltage pumps generate a boost voltage in response to the boost voltage enable signal, and provide the boost voltage to the activated memory bank. Here, the number of the boost voltage pumps is less than that of the memory banks.
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