METHOD FOR PRODUCING EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an epitaxial wafer by which the generation of epitaxial defects can be reduced and the epitaxial wafer excellent in IG effect and having a diameter of≥300 mm can be obtained.

SOLUTION: The method for producing the epitaxial wafer includes a step for pulling a single crystal from a boron-added silicon melt by a Czochralski method in a chamber and a step for forming an epitaxial layer on the surface of a silicon wafer obtained by slicing the single crystal. The single crystal is grown by being passed through a temperature region of 800-600°C while taking a time of 250-180 min on the way of pulling in the chamber. The single crystal has an oxygen concentration of 10×1017-12×1017atoms/cm3and a resistivity of 0.03-0.01Ω×cm. Before forming the epitaxial layer on the wafer, the wafer is subjected to pre-annealing where the wafer is held for 10 min to 4 h at a predetermined temperature within the range of 650-900°C in an inert gas atmosphere.

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