发明名称 SUBSTRATE TREATMENT APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To form a film which does not react with various types of reactive gases, and can block the outward diffusion of metal on the surface of a metallic component. <P>SOLUTION: This substrate treatment apparatus is equipped with a metallic component with at least a part of its metallic surface exposed to the inside of a treatment chamber 201, and at least a part of its metallic surface of the metallic component exposed to the inside of the treatment chamber 201 is subjected to baking treatment at pressure lower than atmospheric pressure. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008118103(A) 申请公布日期 2008.05.22
申请号 JP20070198082 申请日期 2007.07.30
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MAEDA TAKAHIRO;MAEDA KIYOHIKO;OZAKI TAKASHI
分类号 H01L21/31;C23C16/52 主分类号 H01L21/31
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