| 摘要 |
PROBLEM TO BE SOLVED: To assure the reproducibility of a process by easily forming an element isolation film in a trench having a narrow width, wherein a void is formed at a location lower than a substrate surface so that the void does not affect subsequent processes, even if a void is formed within the trench. SOLUTION: The method of forming the element isolation film of a semiconductor device includes steps of: forming first trenches 114 in an element isolation region of a semiconductor substrate 100; forming a spacer 116 on sidewalls of each of the first trenches 114; forming a second trench 118 below each first trench 114 and in the element isolation region in the spacer 116, wherein each second trench 118 is narrower and deeper than the corresponding first trench 114; forming a first oxide layer 115 on sidewalls and a bottom surface of each second trench 118; and filling the first trenches 114 with an insulating film 102. COPYRIGHT: (C)2008,JPO&INPIT
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