| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high voltage device capable of obtaining a high breakdown voltage and a low leak current characteristic. SOLUTION: A transistor having a junction region is formed on a semiconductor substrate, and before forming a contact plug on the junction region, arsenic (As) with the small diffusivity of heat is implanted into the junction region in a plug ion implantation process and ohmic contact is formed to form a shallow junction. COPYRIGHT: (C)2008,JPO&INPIT
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