发明名称 MEMORY REWRITING CONTROL SYSTEM
摘要 PROBLEM TO BE SOLVED: To allow data stored in each of sectors of a flash memory including a boot sector to be rewritten by a single download operation. SOLUTION: A flash memory 101 has a start boot sector 201 storing start boot data, at least two boot sectors 202, 203 storing boot data, and a main sector storing main data. A boot data decision section 301 selects boot data to be run by the start boot data from the boot data stored in the respective boot sectors on the basis of boot data update decision data. Rewriting sections 302, 303 rewrite data stored in a boot sector except a boot sector storing the boot data selected by the boot data decision section 301, the start boot sector, and the main sector on the basis of received update data with a function of the boot data selected by the boot data decision section 301. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008117404(A) 申请公布日期 2008.05.22
申请号 JP20070290950 申请日期 2007.11.08
申请人 SEIKO EPSON CORP 发明人 HIROIKE TAKESHI;TAKAMIZAWA YUSHI
分类号 G06F11/00;G06F3/08;G06F12/00;G06F12/06;G06F12/16 主分类号 G06F11/00
代理机构 代理人
主权项
地址