SELECTIVELY DOPED SEMI-CONDUCTORS AND METHODS OF MAKING THE SAME
摘要
<p>The present invention is generally directed to methods of selectively doping a substrate and the resulting selectively doped substrates. The methods include doping an epilayer of a substrate with the selected doping material to adjust the conductivity of either the epilayers grown over a substrate or the substrate itself. The methods utilize lithography to control the location of the doped regions on the substrate. The process steps can be repeated to form a cyclic method of selectively doping different areas of the substrate with the same or different doping materials to further adjust the properties of the resulting substrate.</p>
申请公布号
WO2008061085(A1)
申请公布日期
2008.05.22
申请号
WO2007US84520
申请日期
2007.11.13
申请人
UNIVERSITY OF SOUTH CAROLINA;KHAN, ASIF;ADIVARAHAN, VINOD