PROCESS FOR PRODUCTION OF GaN CRYSTALS, GaN CRYSTALS, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICES, AND APPARATUS FOR PRODUCTION OF GaN CRYSTALS

摘要

The invention provides a process for the production of GaN crystals which can realize at least either of the prevention of nucleation and the growth of high-quality nonpolar planes. The invention relates to a process of producing GaN crystals in a melt containing both an alkali metal and gallium as the essential components which comprises the step of adjusting the carbon content of the melt and the step of reacting the gallium with nitrogen. The process can realize the prevention of nucleation and/or the growth of nonpolar planes as shown in Fig. 4.