METHODS OF ETCHING A PATTERN LAYER TO FORM STAGGERED HEIGHTS THEREIN AND INTERMEDIATE SEMICONDUCTOR DEVICE STRUCTURES

摘要

A method of forming staggered heights in a pattern layer of an intermediate semiconductor device structure. The method comprises providing an intermediate semiconductor device structure comprising a pattern layer and a first mask layer. forming first openings in the pattern layer, forming spacers adjacent to etched portions of the pattern layer to reduce a width of the first openings, etching the pattern layer to increase a depth of the first openings, and forming second openings in the pattern layer, A method of forming staggered heights in the pattern layer that includes spacers formed on multiple mask layers is also disclosed. Intermediate semiconductor device structures are also disclosed.