发明名称 MANUFACTURING METHOD OF SURFACE ACOUSTIC WAVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method with which a surface acoustic wave element can be reduced in height at a good yield and further, characteristics are also stabilized. SOLUTION: A manufacturing method of a surface acoustic wave element is characterized in that a piezoelectric mono-crystal wafer having rear-side roughness Ra of≤0.15μm or preferably≤0.01μm is prepared, an electrode pattern is formed on the wafer, and the wafer is made into chip and a rear side thereof is ground, so that the rear side can be made coarser than the rear-side roughness while keeping desired thickness. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008118558(A) 申请公布日期 2008.05.22
申请号 JP20060301936 申请日期 2006.11.07
申请人 SHIN ETSU CHEM CO LTD 发明人 ABE ATSUSHI
分类号 H03H3/08 主分类号 H03H3/08
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