SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the following problems: a free-wheeling diode (FWD) must be generally fixed externally, resulting in an increase the number of steps and components when using an IGBT for a switching element in an invertor circuit for driving a motor load because a film thickness of a p++-type collector layer in a punch through IGBT is thick. SOLUTION: A trench 9 is formed so as to penetrate though the collector layer 1 and to reach to a buffer layer 2. And the collector electrode 10 is formed in the inside of the trench 9, too. A current path without the collector layer 1 interposed between the emitter electrode 9 and the collector electrode 10 is formed in this structure, and the path functions as the FWD. COPYRIGHT: (C)2008,JPO&INPIT