METHOD FOR MANUFACTURING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor capable of growing the semiconductor having higher crystal quality. SOLUTION: The method for manufacturing semiconductor permits growth of a semiconductor formed of three or more structural elements including nitrogen on a substrate 1 with the vapor phase deposition. The method includes the steps of: generating a nitride gas for producing molecular beam 6 as the nitrogen gas based on GaN powder 3a as the nitride raw material including nitrogen; generating non-nitride gas for produce molecular beam 7 as non-nitride gas based on non-nitride raw material 4a including an element not included in the GaN powder 3a among the constituent elements of semiconductor; generating a supplementary gas for producing molecular beam 8 as the supplementary raw material gas based on the supplementary raw material 5a including elements other than nitrogen among the elements included in the GaN powder 3a; and causing the semiconductor to grow by introducing and chemically processing molecular beams 6 to 8 on the substrate 1. COPYRIGHT: (C)2008,JPO&INPIT