INDUCTOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an inductor element of which parasitic capacity and parasitic resistance are low and is hard to be affected by noises of a substrate. SOLUTION: The method is used to manufacture the inductor element 300, and it includes a step to etch a semiconductor substrate 110 to form a pillar-shaped part 140 wherein a face parallel to the semiconductor substrate 110 in the surface direction is apart from its periphery and a step to form an Au layer 320 on the surface of the pillar-shaped part 140. The step to form the pillar-shaped part 140 includes a step to form a thin area 120 on the semiconductor substrate 110 that is thinned in the direction of thickness and a step to form a pair of through holes 130 in the thin area 120. COPYRIGHT: (C)2008,JPO&INPIT