发明名称 Phase change memory cell having a sidewall contact
摘要 A memory cell includes a first electrode and a second electrode forming an opening. The opening is defined by a first sidewall, a second sidewall, and a surface extending between the first sidewall and the second sidewall. The memory cell includes phase change material contacting the first electrode and the first sidewall and the second sidewall. The memory cell includes isolation material electrically isolating the phase change material from the surface extending between the first sidewall and the second sidewall.
申请公布号 US2008116442(A1) 申请公布日期 2008.05.22
申请号 US20060601304 申请日期 2006.11.17
申请人 NIRSCHL THOMAS;LAMOREY MARK 发明人 NIRSCHL THOMAS;LAMOREY MARK
分类号 H01L29/68;G11C11/00;H01L21/02 主分类号 H01L29/68
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