发明名称 |
Phase change memory cell having a sidewall contact |
摘要 |
A memory cell includes a first electrode and a second electrode forming an opening. The opening is defined by a first sidewall, a second sidewall, and a surface extending between the first sidewall and the second sidewall. The memory cell includes phase change material contacting the first electrode and the first sidewall and the second sidewall. The memory cell includes isolation material electrically isolating the phase change material from the surface extending between the first sidewall and the second sidewall.
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申请公布号 |
US2008116442(A1) |
申请公布日期 |
2008.05.22 |
申请号 |
US20060601304 |
申请日期 |
2006.11.17 |
申请人 |
NIRSCHL THOMAS;LAMOREY MARK |
发明人 |
NIRSCHL THOMAS;LAMOREY MARK |
分类号 |
H01L29/68;G11C11/00;H01L21/02 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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