| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize a semiconductor relay capable of using it up to about 20 Gbps, by minimizing its parasitic inductance. <P>SOLUTION: The semiconductor relay comprises a semiconductor substrate disposed on a grounded metal plate, an insulating layer and a single-crystal layer which are laminated successively on the semiconductor substrate, a light emitting diode connected with wirings formed on the single-crystal layer, photovoltaic elements, a thyristor, diodes, and a pair of output FETs which are formed in the single-crystal layer, and four signal pads formed separately from the grounded metal plate. Hereupon, the anode and cathode of the light emitting diode are connected respectively with two ones of the signal pads via bonding wires, and the respective drain electrodes of the output FETs are connected with the other two ones of the signal pads via the bonding wires, and further, electronic components provided on the semiconductor substrate wherefrom the bottom surfaces of the grounded metal plate and the signal pads are excluded are sealed with a resin-sealed type package. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
