发明名称 METHOD FOR MODIFYING Si-O-Si BOND-CONTAINING COMPOUND AND METHOD FOR MAKING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for modifying an Si-O-Si bond-containing compound whereby a light-emitting modified part can be formed on the surface or inside of the compound and to provide a method for making a device. SOLUTION: A light-emitting modified part of silicon dioxide is formed on the surface or inside of a silicone 1 as an Si-O-Si bond-containing compound by irradiating it with a laser beam of a wavelength of below 266 nm through a mask 3 or a lens 4. Thus, it is possible to establish a novel method of making a light-emitting device based on an Si-O-Si bond-containing compound. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008115334(A) 申请公布日期 2008.05.22
申请号 JP20060302052 申请日期 2006.11.07
申请人 TECHNICAL RESEARCH & DEVELOPMENT INSTITUTE MINISTRY OF DEFENCE 发明人 OGOSHI MASAYUKI;INOUE SHIGEMI
分类号 C08J7/00 主分类号 C08J7/00
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