发明名称 |
METHOD FOR MODIFYING Si-O-Si BOND-CONTAINING COMPOUND AND METHOD FOR MAKING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for modifying an Si-O-Si bond-containing compound whereby a light-emitting modified part can be formed on the surface or inside of the compound and to provide a method for making a device. SOLUTION: A light-emitting modified part of silicon dioxide is formed on the surface or inside of a silicone 1 as an Si-O-Si bond-containing compound by irradiating it with a laser beam of a wavelength of below 266 nm through a mask 3 or a lens 4. Thus, it is possible to establish a novel method of making a light-emitting device based on an Si-O-Si bond-containing compound. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008115334(A) |
申请公布日期 |
2008.05.22 |
申请号 |
JP20060302052 |
申请日期 |
2006.11.07 |
申请人 |
TECHNICAL RESEARCH & DEVELOPMENT INSTITUTE MINISTRY OF DEFENCE |
发明人 |
OGOSHI MASAYUKI;INOUE SHIGEMI |
分类号 |
C08J7/00 |
主分类号 |
C08J7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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