| 摘要 |
<p>A method of fabricating a semiconductor device is provided to improve a semiconductor yield by preventing formation of bridge of a contact metal when a metal interconnection is formed. A first oxide layer(45), a nitride layer(46) and a second oxide layer are deposited on a substrate having plural gate electrodes, and then are primarily etched to form a spacer at both sidewalls of the gate electrodes. The second oxide layer of the spacer is secondarily etched, and then an interlayer dielectric(48) is formed on the entire surface of the substrate comprising the spacer. A contact hole is formed on the region between the gate electrodes, and then is buried by a photoresist material. The photoresist material is removed, and then metal material is buried in the contact hole.</p> |
