发明名称 |
MOUNTING DEVICE, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mounting device in which there is no fear of causing any contamination of a heavy metal to a processed body and an electrostatic chuck doesn't cause any dielectric breakdown for a long period of time. <P>SOLUTION: The mounting device consists of a yttrium oxide frame spraying layer with a thickness of 200 to 280 μm in which an electrostatic chuck layer which is an insulating layer at a front surface side of an electrode layer is formed by a plasma frame spray, and has such a configuration that a front surface of the mounting device is formed to a surface roughness depending on a particle size of yttrium oxide by which a frame spraying is carried out. By making such a configuration, a durability to a plasma increases, and moreover there is no fear of causing any contamination of the heavy metal. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008117982(A) |
申请公布日期 |
2008.05.22 |
申请号 |
JP20060300923 |
申请日期 |
2006.11.06 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
ITO HIROHARU;KATO KENICHI;UEDA TAKEHIRO |
分类号 |
H01L21/683;C23C4/10;H01L21/3065;H05H1/46 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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