发明名称 MOUNTING DEVICE, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a mounting device in which there is no fear of causing any contamination of a heavy metal to a processed body and an electrostatic chuck doesn't cause any dielectric breakdown for a long period of time. <P>SOLUTION: The mounting device consists of a yttrium oxide frame spraying layer with a thickness of 200 to 280 &mu;m in which an electrostatic chuck layer which is an insulating layer at a front surface side of an electrode layer is formed by a plasma frame spray, and has such a configuration that a front surface of the mounting device is formed to a surface roughness depending on a particle size of yttrium oxide by which a frame spraying is carried out. By making such a configuration, a durability to a plasma increases, and moreover there is no fear of causing any contamination of the heavy metal. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008117982(A) 申请公布日期 2008.05.22
申请号 JP20060300923 申请日期 2006.11.06
申请人 TOKYO ELECTRON LTD 发明人 ITO HIROHARU;KATO KENICHI;UEDA TAKEHIRO
分类号 H01L21/683;C23C4/10;H01L21/3065;H05H1/46 主分类号 H01L21/683
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