发明名称 FET DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To improve switching speed by preventing malfunction of an FET switch of bridge connection. SOLUTION: Windings (12b, 12c, 22b, and 22c), two for each, are provided on the secondary side of transformers 12 and 22. When a drive signal S1 is at on level, the gate voltage of an FET201 is made a plus potential via the winding 12b to turn on the FET201. When the drive signal S1 is at off level, the gate voltage of the FET201 is made to a minus potential via the winding 12b. Under this condition, a current flows the winding 22c when the drive signal S2 is at off level, and the gate voltage of the FET201 further becomes a minus potential to control the FET201 to be surely off. An FET202 is controlled likewise. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008118820(A) 申请公布日期 2008.05.22
申请号 JP20060301874 申请日期 2006.11.07
申请人 TOSHIBA CORP 发明人 DOI MASAYASU;NOMURA FUJIO
分类号 H02M1/08;H02M3/00 主分类号 H02M1/08
代理机构 代理人
主权项
地址