| 摘要 |
PROBLEM TO BE SOLVED: To obtain a desired refractive index and a desired rare earth addition state in depositing a silicon compound thin film such as an SiO<SB>x</SB>film or a SiON film. SOLUTION: First, inner pressure is reduced to be the prescribed pressure. Then, gas is introduced from a gas introduction part 106, thereby generating first plasma in a plasma generation chamber 101. Sputter gas such as Ar is introduced from a gas introduction part 133, thereby generating second plasma in a sputter chamber 103. In a state where the two kinds of plasma are generated, a thin film is deposited by a PECVD method on the surface of a substrate 105 arranged in a deposition chamber 102, through the use of the first plasma and silicon source gas to be supplied from a source gas introduction part 107. Simultaneously, a rare earth element target 121 is sputtered with the second plasma in the sputter chamber 103. The elements generated thereby are added to the thin film deposited on the substrate 105. COPYRIGHT: (C)2008,JPO&INPIT
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