| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern inspection method for inspecting a pattern by extracting an edge shape of the pattern from an image acquired by a scanning microscope, and by predicting an electric performance of a device from the extracted information. SOLUTION: The intensity distribution of reflected electrons or secondary electrons 1609 is processed in a control part 1611 of the scanning electron microscope and an inspection computer 1612, and the distribution of the gate length in a single gate is determined from the data of the edge position. A transistor performance is predicted by regarding a transistor produced finally as parallel connection of a plurality of transistors having various gate lengths, and the quality or the grade of the pattern is determined based on the prediction results. Hereby, the effect on a device performance of edge roughness can be predicted quickly and highly accurately, and the pattern inspection can be performed efficiently and highly accurately corresponding to a device specification. COPYRIGHT: (C)2008,JPO&INPIT
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