NEW AND IMPROVED BEAM LINE ARCHITECTURE FOR ION IMPLANTER

摘要

A parallelizing component (439) of an ion implantation system (410) comprises two angled dipole magnets (439a, 439b) that mirror one another and serve to bend an ion beam (424) traversing therethrough to have a substantially "s" shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer (430), such as implant angle, for example. Additionally, a " deceleration stage (457) is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamlihe to mitigate beam blowup.