发明名称 |
PLASMA DAMAGE FREE SPUTTER GUN, SPUTTER, PLASMA PROCESS APPARATUS AND FILM-FORMING METHOD |
摘要 |
A plasma damage-free sputter gun, a sputtering apparatus comprising the same, and a plasma processing apparatus and a film-forming method using the same are provided to reduce the process time for film formation by applying the film-forming method to a metal electrode film-forming process of an organic electric field LED. A plasma processing apparatus including a sputter gun comprises a vacuum chamber(100), a substrate supporter(102), a pair of sputter guns(104), a target(105) and a power supply unit. The sputter gun is installed opposite a substrate(101), and comprises a yoke plate, and several magnets positioned at the yoke plate and separated by a uniform gap. The targets are installed on the yoke plates respectively. A gun supporter(103) supports the sputter gun. The power supply unit supplies the power to the target. The sputter guns are positioned opposite each other. The targets are installed on the surfaces opposite the sputter gun pair.
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申请公布号 |
KR20080045031(A) |
申请公布日期 |
2008.05.22 |
申请号 |
KR20060114110 |
申请日期 |
2006.11.17 |
申请人 |
TOP ENGINEERING CO., LTD. |
发明人 |
RYU, DO HYUN;LEE, SANG HYUN;KIM, HAN KI;BAE, JUNG HYEOK;MOON, JONG MIN |
分类号 |
H01L21/205;H01L21/203;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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